Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition: Fid-Bau Portal

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Leone, S. / Pedersen, H. / Henry, A. / Rao, S.P. / Kordina, O. / Janzen, E.

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Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Leone, S. / Pedersen, H. / Henry, A. / Rao, S.P. / Kordina, O. / Janzen, E.

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Leone, S. / Pedersen, H. / Henry, A. / Rao, S.P. / Kordina, O. / Janzen, E.

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Check availability in my library

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Document information

Title:

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Contributors:

Leone, S. (author) / Pedersen, H. (author) / Henry, A. (author) / Rao, S.P. (author) / Kordina, O. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 93-96

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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