Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT: Fid-Bau Portal

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Miyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H.

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Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Miyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H.

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Miyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H.

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Titel:

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Beteiligte:

Miyazawa, T. ( Autor:in ) / Ji, S.Y. ( Autor:in ) / Kojima, K. ( Autor:in ) / Ishida, Y. ( Autor:in ) / Nakayama, K. ( Autor:in ) / Tanaka, A. ( Autor:in ) / Asano, K. ( Autor:in ) / Tsuchida, H. ( Autor:in ) / Okumura, H. / Harima, H. ... [mehr]

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 135-138

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Katakami, S. / Fujisawa, H. / Takenaka, K. et al. | British Library Online Contents | 2013

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

Yazdanfar, M. / Stenberg, P. / Booker, I.D. et al. | British Library Online Contents | 2013

Thick Epitaxial Layers Growth by Chlorine Addition

La Via, F. / Izzo, G. / Camarda, M. et al. | British Library Online Contents | 2009

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

La Via, F. / Izzo, G. / Mauceri, M. et al. | British Library Online Contents | 2009

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Leone, S. / Pedersen, H. / Henry, A. et al. | British Library Online Contents | 2009

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