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An Approach to Trace Defects Propagation during SiC Epitaxy

Fan, Y.M. / Zhang, L.G. / Wang, J. / Zhang, X.M. / Zhang, Z.H. / Zhang, B.S. / Sudarshan, T.S.

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An Approach to Trace Defects Propagation during SiC Epitaxy

Fan, Y.M. / Zhang, L.G. / Wang, J. / Zhang, X.M. / Zhang, Z.H. / Zhang, B.S. / Sudarshan, T.S.

An Approach to Trace Defects Propagation during SiC Epitaxy

Fan, Y.M. / Zhang, L.G. / Wang, J. / Zhang, X.M. / Zhang, Z.H. / Zhang, B.S. / Sudarshan, T.S.

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Document information

Title:

An Approach to Trace Defects Propagation during SiC Epitaxy

Contributors:

Fan, Y.M. (author) / Zhang, L.G. (author) / Wang, J. (author) / Zhang, X.M. (author) / Zhang, Z.H. (author) / Zhang, B.S. (author) / Sudarshan, T.S. (author) / Okumura, H. / Harima, H. / Kimoto, T.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 147-150

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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