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Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
Beyer, F.C. (author) / Pedersen, H. (author) / Henry, A. (author) / Janzen, E. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 373-376
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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