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Influence of P^+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
Influence of P^+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
Influence of P^+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
Ishiji, K. (author) / Kawado, S. (author) / Hirai, Y. (author) / Nagamachi, S. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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