Nanowire growth on Si wafers by oxygen implantation and annealing: Fid-Bau Portal

Nanowire growth on Si wafers by oxygen implantation and annealing

de Vasconcelos, E. A. / dos Santos, F. R. / da Silva Jr., E. F. / Boudinov, H.

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Nanowire growth on Si wafers by oxygen implantation and annealing

de Vasconcelos, E. A. / dos Santos, F. R. / da Silva Jr., E. F. / Boudinov, H.

Nanowire growth on Si wafers by oxygen implantation and annealing

de Vasconcelos, E. A. / dos Santos, F. R. / da Silva Jr., E. F. / Boudinov, H.

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Document information

Title:

Nanowire growth on Si wafers by oxygen implantation and annealing

Contributors:

de Vasconcelos, E. A. (author) / dos Santos, F. R. (author) / da Silva Jr., E. F. (author) / Boudinov, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 5572-5574

Publication date:

2006-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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