Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors: Fid-Bau Portal

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Thomas, S.M. / Jennings, M.R. / Sharma, Y.K. / Fisher, C.A. / Mawby, P.A.

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Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Thomas, S.M. / Jennings, M.R. / Sharma, Y.K. / Fisher, C.A. / Mawby, P.A.

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Thomas, S.M. / Jennings, M.R. / Sharma, Y.K. / Fisher, C.A. / Mawby, P.A.

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Title:

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Contributors:

Thomas, S.M. (author) / Jennings, M.R. (author) / Sharma, Y.K. (author) / Fisher, C.A. (author) / Mawby, P.A. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 599-602

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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