Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Investigation of gate edge effect on interface trap density in 3C-SiC MOS capacitors

    New search for: Gutt, T.
    New search for: Malachowski, T.
    New search for: Przewlocki, H. M.
    New search for: Engstrom, O.
    New search for: Bakowski, M.
    New search for: Esteve, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Investigation of gate edge effect on interface trap density in 3C-SiC MOS capacitors

    New search for: Gutt, T.
    New search for: Malachowski, T.
    New search for: Przewlocki, H. M.
    New search for: Engstrom, O.
    New search for: Bakowski, M.
    New search for: Esteve, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of gate edge effect on interface trap density in 3C-SiC MOS capacitors

    New search for: Gutt, T.
    New search for: Malachowski, T.
    New search for: Przewlocki, H. M.
    New search for: Engstrom, O.
    New search for: Bakowski, M.
    New search for: Esteve, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Investigation of gate edge effect on interface trap density in 3C-SiC MOS capacitors

    Contributors:

    Gutt, T. (author) / Malachowski, T. (author) / Przewlocki, H. M. (author) / Engstrom, O. (author) / Bakowski, M. (author) / Esteve, R. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 177 ; 1327-1330

    Publication date:

    2012-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors

    Gutt, T. / Malachowski, T. / Przewlocki, H.M. et al. | British Library Online Contents | 2012

    Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

    Thomas, S.M. / Jennings, M.R. / Sharma, Y.K. et al. | British Library Online Contents | 2014

    gate trap

    KIM KYOUNG SEOK | European Patent Office | 2023

    Free access

    Trap Assisted Gas Sensing Mechanism in MISiC Capacitors

    Horsfall, A. / Weng, M. H. / Mahapatra, R. et al. | British Library Online Contents | 2007

    Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition

    Kwak, Iljo / Kavrik, Mahmut / Park, Jun Hong et al. | British Library Online Contents | 2019

    Back to top