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The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
Gutt, T. (author) / Malachowski, T. (author) / Przewlocki, H.M. (author) / Engstrom, O. (author) / Bakowski, M. (author) / Esteve, R. (author) / Alquier, D.
2012-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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