A platform for research: civil engineering, architecture and urbanism
Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
Fukumoto, Y. (author) / Habuka, H. (author) / Kato, T. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
British Library Online Contents | 2009
|Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas
British Library Online Contents | 2014
|British Library Online Contents | 2018
|British Library Online Contents | 2018
|Effect of chlorine trifluoride and perchloryl fluoride on construction materials
Engineering Index Backfile | 1964
|