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4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Habuka, H. / Katsumi, Y. / Miura, Y. / Tanaka, K. / Fukai, Y. / Fukae, T. / Gao, Y. / Kato, T. / Okumura, H. / Arai, K.

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4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Habuka, H. / Katsumi, Y. / Miura, Y. / Tanaka, K. / Fukai, Y. / Fukae, T. / Gao, Y. / Kato, T. / Okumura, H. / Arai, K.

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Habuka, H. / Katsumi, Y. / Miura, Y. / Tanaka, K. / Fukai, Y. / Fukae, T. / Gao, Y. / Kato, T. / Okumura, H. / Arai, K.

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Document information

Title:

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Contributors:

Habuka, H. (author) / Katsumi, Y. (author) / Miura, Y. (author) / Tanaka, K. (author) / Fukai, Y. (author) / Fukae, T. (author) / Gao, Y. (author) / Kato, T. (author) / Okumura, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 655-658

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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