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    Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

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    Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

    New search for: Bartolf, H.
    New search for: Sundaramoorthy, V.
    New search for: Mihaila, A.
    New search for: Berthou, M.
    New search for: Godignon, P.
    New search for: Millan, J.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

    New search for: Bartolf, H.
    New search for: Sundaramoorthy, V.
    New search for: Mihaila, A.
    New search for: Berthou, M.
    New search for: Godignon, P.
    New search for: Millan, J.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    Access

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    Document information
    Title:

    Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

    Contributors:

    Bartolf, H. (author) / Sundaramoorthy, V. (author) / Mihaila, A. (author) / Berthou, M. (author) / Godignon, P. (author) / Millan, J. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 795-799

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    5 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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