Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique: Fid-Bau Portal

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Dheilly, N. / Planson, D. / Brosselard, P. / Hassan, J. / Bevilacqua, P. / Tournier, D. / Montserrat, J. / Raynaud, C. / Morel, H.

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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Dheilly, N. / Planson, D. / Brosselard, P. / Hassan, J. / Bevilacqua, P. / Tournier, D. / Montserrat, J. / Raynaud, C. / Morel, H.

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Dheilly, N. / Planson, D. / Brosselard, P. / Hassan, J. / Bevilacqua, P. / Tournier, D. / Montserrat, J. / Raynaud, C. / Morel, H.

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Document information

Title:

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Contributors:

Dheilly, N. (author) / Planson, D. (author) / Brosselard, P. (author) / Hassan, J. (author) / Bevilacqua, P. (author) / Tournier, D. (author) / Montserrat, J. (author) / Raynaud, C. (author) / Morel, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 703-706

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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