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4H-SiC Trench MOSFET with Bottom Oxide Protection
4H-SiC Trench MOSFET with Bottom Oxide Protection
4H-SiC Trench MOSFET with Bottom Oxide Protection
Kagawa, Y. (author) / Fujiwara, N. (author) / Sugawara, K. (author) / Tanaka, R. (author) / Fukui, Y. (author) / Yamamoto, Y. (author) / Miura, N. (author) / Imaizumi, M. (author) / Nakata, S. (author) / Yamakawa, S. (author)
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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