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A novel technique for fabricating trench MOSFET employing oxide spacers and self-align techniques

Baek, J. / Kim, J. / Kim, S. G. / Moon, J. K. / Lee, Y. H.

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A novel technique for fabricating trench MOSFET employing oxide spacers and self-align techniques

Baek, J. / Kim, J. / Kim, S. G. / Moon, J. K. / Lee, Y. H.

A novel technique for fabricating trench MOSFET employing oxide spacers and self-align techniques

Baek, J. / Kim, J. / Kim, S. G. / Moon, J. K. / Lee, Y. H.

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Order at Subito €

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Document information

Title:

A novel technique for fabricating trench MOSFET employing oxide spacers and self-align techniques

Contributors:

Baek, J. (author) / Kim, J. (author) / Kim, S. G. (author) / Moon, J. K. (author) / Lee, Y. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 97 ; 123-128

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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