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Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
Puglisi, D. (author) / Eriksson, J. (author) / Bur, C. (author) / Schutze, A. (author) / Spetz, A.L. (author) / Andersson, M. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
Silicon Carbide and Related Materials 2013 ; 1067-1070
MATERIALS SCIENCE FORUM ; 778/780
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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