Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
Puglisi, D. (Autor:in) / Eriksson, J. (Autor:in) / Bur, C. (Autor:in) / Schutze, A. (Autor:in) / Spetz, A.L. (Autor:in) / Andersson, M. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
Silicon Carbide and Related Materials 2013 ; 1067-1070
MATERIALS SCIENCE FORUM ; 778/780
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Silicon Carbide Power Field-Effect Transistors
| British Library Online Contents | 2005
Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
| British Library Online Contents | 2012
Measuring Concentrations of Volatile Organic Compounds in Vinyl Flooring
| Taylor & Francis Verlag | 2001
Organic Field-Effect Transistors
| British Library Online Contents | 1998
Decreasing concentrations of volatile organic compounds (VOC) emitted following home renovations
| Online Contents | 2010