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    The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si^+-Implanted SiO~2 Thin Films

    New search for: Yang, F.W.
    New search for: Cheng, C.M.
    New search for: Chen, K.H.
    New search for: Pan, W.
    New search for: Gong, J.

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    The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si^+-Implanted SiO~2 Thin Films

    New search for: Yang, F.W.
    New search for: Cheng, C.M.
    New search for: Chen, K.H.
    New search for: Pan, W.
    New search for: Gong, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si^+-Implanted SiO~2 Thin Films

    New search for: Yang, F.W.
    New search for: Cheng, C.M.
    New search for: Chen, K.H.
    New search for: Pan, W.
    New search for: Gong, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si^+-Implanted SiO~2 Thin Films

    Contributors:

    Yang, F.W. (author) / Cheng, C.M. (author) / Chen, K.H. (author) / Pan, W. / Gong, J.

    Published in:

    High-Performance Ceramics VIII ; 1013-1016

    KEY ENGINEERING MATERIALS ; 602/603

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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