Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density: Fid-Bau Portal

Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Lee, S. / Sangle, A. / Lu, P. / Chen, A. / Zhang, W. / Lee, J. S. / Wang, H. / Jia, Q. / MacManus-Driscoll, J. L.

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Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Lee, S. / Sangle, A. / Lu, P. / Chen, A. / Zhang, W. / Lee, J. S. / Wang, H. / Jia, Q. / MacManus-Driscoll, J. L.

Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Lee, S. / Sangle, A. / Lu, P. / Chen, A. / Zhang, W. / Lee, J. S. / Wang, H. / Jia, Q. / MacManus-Driscoll, J. L.

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Title:

Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Contributors:

Lee, S. (author) / Sangle, A. (author) / Lu, P. (author) / Chen, A. (author) / Zhang, W. (author) / Lee, J. S. (author) / Wang, H. (author) / Jia, Q. (author) / MacManus-Driscoll, J. L. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 6284-6289

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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