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    Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    New search for: Shah, A.
    New search for: Ahmad, J.
    New search for: Ahmad, I.
    New search for: Mehmood, M.
    New search for: Mahmood, A.
    New search for: Rasheed, M. A.

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    Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    New search for: Shah, A.
    New search for: Ahmad, J.
    New search for: Ahmad, I.
    New search for: Mehmood, M.
    New search for: Mahmood, A.
    New search for: Rasheed, M. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    New search for: Shah, A.
    New search for: Ahmad, J.
    New search for: Ahmad, I.
    New search for: Mehmood, M.
    New search for: Mahmood, A.
    New search for: Rasheed, M. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    Contributors:

    Shah, A. (author) / Ahmad, J. (author) / Ahmad, I. (author) / Mehmood, M. (author) / Mahmood, A. (author) / Rasheed, M. A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 317 ; 262-268

    Publication date:

    2014-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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