Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process: Fid-Bau Portal

Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process

Zhang, J. / Deng, H. / He, J. / Meng, X. / Liu, T. / Sun, L. / Yang, P. / Chu, J.

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Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process

Zhang, J. / Deng, H. / He, J. / Meng, X. / Liu, T. / Sun, L. / Yang, P. / Chu, J.

Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process

Zhang, J. / Deng, H. / He, J. / Meng, X. / Liu, T. / Sun, L. / Yang, P. / Chu, J.

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Document information

Title:

Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process

Contributors:

Zhang, J. (author) / Deng, H. (author) / He, J. (author) / Meng, X. (author) / Liu, T. (author) / Sun, L. (author) / Yang, P. (author) / Chu, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 326 ; 211-215

Publication date:

2015-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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