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    Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

    New search for: Du, X.
    New search for: Li, Z.
    New search for: Luan, C.
    New search for: Wang, W.
    New search for: Wang, M.
    New search for: Feng, X.
    New search for: Xiao, H.
    New search for: Ma, J.

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    Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

    New search for: Du, X.
    New search for: Li, Z.
    New search for: Luan, C.
    New search for: Wang, W.
    New search for: Wang, M.
    New search for: Feng, X.
    New search for: Xiao, H.
    New search for: Ma, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

    New search for: Du, X.
    New search for: Li, Z.
    New search for: Luan, C.
    New search for: Wang, W.
    New search for: Wang, M.
    New search for: Feng, X.
    New search for: Xiao, H.
    New search for: Ma, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

    Contributors:

    Du, X. (author) / Li, Z. (author) / Luan, C. (author) / Wang, W. (author) / Wang, M. (author) / Feng, X. (author) / Xiao, H. (author) / Ma, J. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 50 ; 3252-3257

    Publication date:

    2015-01-01

    Size:

    6 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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