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    Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

    New search for: Zhang, H.
    New search for: Wu, Z.
    New search for: Niu, R.
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    New search for: he, Q.
    New search for: Jiang, Y.

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    Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

    New search for: Zhang, H.
    New search for: Wu, Z.
    New search for: Niu, R.
    New search for: Wu, X.
    New search for: he, Q.
    New search for: Jiang, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

    New search for: Zhang, H.
    New search for: Wu, Z.
    New search for: Niu, R.
    New search for: Wu, X.
    New search for: he, Q.
    New search for: Jiang, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

    Contributors:

    Zhang, H. (author) / Wu, Z. (author) / Niu, R. (author) / Wu, X. (author) / he, Q. (author) / Jiang, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 331 ; 92-97

    Publication date:

    2015-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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