Formation of Ge^0 and GeOx nanoclusters in Ge^+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing: Fid-Bau Portal

Formation of Ge^0 and GeOx nanoclusters in Ge^+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Zatsepin, A. F. / Zatsepin, D. A. / Zhidkov, I. S. / Kurmaev, E. Z. / Fitting, H. J. / Schmidt, B. / Mikhailovich, A. P. / Lawniczak-Jablonska, K.

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Formation of Ge^0 and GeOx nanoclusters in Ge^+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Zatsepin, A. F. / Zatsepin, D. A. / Zhidkov, I. S. / Kurmaev, E. Z. / Fitting, H. J. / Schmidt, B. / Mikhailovich, A. P. / Lawniczak-Jablonska, K.

Formation of Ge^0 and GeOx nanoclusters in Ge^+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Zatsepin, A. F. / Zatsepin, D. A. / Zhidkov, I. S. / Kurmaev, E. Z. / Fitting, H. J. / Schmidt, B. / Mikhailovich, A. P. / Lawniczak-Jablonska, K.

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Title:

Formation of Ge^0 and GeOx nanoclusters in Ge^+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Contributors:

Zatsepin, A. F. (author) / Zatsepin, D. A. (author) / Zhidkov, I. S. (author) / Kurmaev, E. Z. (author) / Fitting, H. J. (author) / Schmidt, B. (author) / Mikhailovich, A. P. (author) / Lawniczak-Jablonska, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 349 ; 780-784

Publication date:

2015-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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