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    Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

    New search for: Chen, X.
    New search for: Feng, J.
    New search for: Bae, D.

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    Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

    New search for: Chen, X.
    New search for: Feng, J.
    New search for: Bae, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

    New search for: Chen, X.
    New search for: Feng, J.
    New search for: Bae, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

    Contributors:

    Chen, X. (author) / Feng, J. (author) / Bae, D. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 324 ; 275-279

    Publication date:

    2015-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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