Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure: Fid-Bau Portal

Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

Chakrabarti, Somsubhra / Panja, Rajeswar / Roy, Sourav / Roy, Anisha / Samanta, Subhranu / Dutta, Mrinmoy / Ginnaram, Sreekanth / Maikap, Siddheswar / Cheng, Hsin-Ming / Tsai, Ling-Na / ... [more]

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

Chakrabarti, Somsubhra / Panja, Rajeswar / Roy, Sourav / Roy, Anisha / Samanta, Subhranu / Dutta, Mrinmoy / Ginnaram, Sreekanth / Maikap, Siddheswar / Cheng, Hsin-Ming / Tsai, Ling-Na / ... [more]

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

Chakrabarti, Somsubhra / Panja, Rajeswar / Roy, Sourav / Roy, Anisha / Samanta, Subhranu / Dutta, Mrinmoy / Ginnaram, Sreekanth / Maikap, Siddheswar / Cheng, Hsin-Ming / Tsai, Ling-Na / ... [more]

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Document information

Title:

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

Contributors:

Chakrabarti, Somsubhra (author) / Panja, Rajeswar (author) / Roy, Sourav (author) / Roy, Anisha (author) / Samanta, Subhranu (author) / Dutta, Mrinmoy (author) / Ginnaram, Sreekanth (author) / Maikap, Siddheswar (author) / Cheng, Hsin-Ming (author) / Tsai, Ling-Na (author)

Published in:

Applied surface science ; 433 ; 51-59

Publication date:

2018-01-01

Size:

9 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

Similar titles

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

Chakrabarti, Somsubhra / Panja, Rajeswar / Roy, Sourav et al. | British Library Online Contents | 2018

Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

Chen, X. / Feng, J. / Bae, D. | British Library Online Contents | 2015

Ternary Logic with Stateful Neural Networks Using a Bilayered TaO_X‐Based Memristor Exhibiting Ternary States

Kim, Young Seok / An, Jangho / Jeon, Jae Bum et al. | Wiley | 2022

Free access

Double-stacked gate insulators SiOx/TaOx for flexible amorphous InGaZnO thin film transistors

Dong, Chengyuan / Liu, Guochao / Zhang, Ying et al. | British Library Online Contents | 2019

Different Kinds of Carbon-Based Material for Resistive Gas Sensing

Boruta, R. / Olejnik, R. / Slobodian, P. et al. | British Library Online Contents | 2013