HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment: Fid-Bau Portal

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, K. S. / Patil, V. S. / Khairnar, A. G. / Mahajan, A. M.

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HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, K. S. / Patil, V. S. / Khairnar, A. G. / Mahajan, A. M.

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, K. S. / Patil, V. S. / Khairnar, A. G. / Mahajan, A. M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Contributors:

Agrawal, K. S. (author) / Patil, V. S. (author) / Khairnar, A. G. (author) / Mahajan, A. M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 364 ; 747-751

Publication date:

2016-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Agrawal, Khushabu S. / Patil, Vilas S. / Khairnar, Anil G. et al. | British Library Online Contents | 2016

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, Khushabu S. / Patil, Vilas S. / Khairnar, Anil G. et al. | British Library Online Contents | 2016

Effect of inner oxygen on the interfacial layer formation for HfO2 gate dielectric

Jiang, R. / Xie, E. Q. / Wang, Z. F. | British Library Online Contents | 2007

Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric

Moradi, M. / Nathan, A. / Haverinen, H. M. et al. | British Library Online Contents | 2009

Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

Ray, S. K. / Mahapatra, R. / Maikap, S. et al. | British Library Online Contents | 2004