Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

    New search for: Ray, S. K.
    New search for: Mahapatra, R.
    New search for: Maikap, S.
    New search for: Dhar, A.
    New search for: Bhattacharya, D.
    New search for: Lee, J. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

    New search for: Ray, S. K.
    New search for: Mahapatra, R.
    New search for: Maikap, S.
    New search for: Dhar, A.
    New search for: Bhattacharya, D.
    New search for: Lee, J. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

    New search for: Ray, S. K.
    New search for: Mahapatra, R.
    New search for: Maikap, S.
    New search for: Dhar, A.
    New search for: Bhattacharya, D.
    New search for: Lee, J. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

    Contributors:

    Ray, S. K. (author) / Mahapatra, R. (author) / Maikap, S. (author) / Dhar, A. (author) / Bhattacharya, D. (author) / Lee, J. H. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 203-208

    Publication date:

    2004-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

    Maeng, W. J. / Oh, I. K. / Kim, W. H. et al. | British Library Online Contents | 2014

    Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

    Huang, L. T. / Chang, M. L. / Huang, J. J. et al. | British Library Online Contents | 2013

    Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering

    He, G. / Fang, Q. / Li, G. H. et al. | British Library Online Contents | 2007

    Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics

    Karakaya, K. / Barcones, B. / Rittersma, Z. M. et al. | British Library Online Contents | 2006

    Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

    Huang, L. Y. / Li, A. D. / Zhang, W. Q. et al. | British Library Online Contents | 2010

    Back to top