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    Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device

    New search for: Zhang, L.
    New search for: Xu, H.
    New search for: Wang, Z.
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    New search for: Ma, J.
    New search for: Liu, Y.

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    Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device

    New search for: Zhang, L.
    New search for: Xu, H.
    New search for: Wang, Z.
    New search for: Yu, H.
    New search for: Ma, J.
    New search for: Liu, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device

    New search for: Zhang, L.
    New search for: Xu, H.
    New search for: Wang, Z.
    New search for: Yu, H.
    New search for: Ma, J.
    New search for: Liu, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device

    Contributors:

    Zhang, L. (author) / Xu, H. (author) / Wang, Z. (author) / Yu, H. (author) / Ma, J. (author) / Liu, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 360 ; 338-341

    Publication date:

    2016-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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