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Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device
Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device
Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device
APPLIED SURFACE SCIENCE ; 360 ; 338-341
01.01.2016
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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