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    Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

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    Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    New search for: Ye, W.
    New search for: Deng, J.
    New search for: Wang, X.
    New search for: Cui, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    New search for: Ye, W.
    New search for: Deng, J.
    New search for: Wang, X.
    New search for: Cui, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    Contributors:

    Ye, W. (author) / Deng, J. (author) / Wang, X. (author) / Cui, L. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 390 ; 831-837

    Publication date:

    2016-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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