Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers: Fid-Bau Portal

Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Yang, G.F. / Tong, Y.Y. / Xie, F. / Yan, D.W. / Wang, F.X.

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Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Yang, G.F. / Tong, Y.Y. / Xie, F. / Yan, D.W. / Wang, F.X.

Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Yang, G.F. / Tong, Y.Y. / Xie, F. / Yan, D.W. / Wang, F.X.

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Check availability in my library

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Title:

Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Contributors:

Yang, G.F. (author) / Tong, Y.Y. (author) / Xie, F. (author) / Yan, D.W. (author) / Wang, F.X. (author)

Published in:

Materials science in semiconductor processing ; 29 ; 362-366

Publication date:

2015-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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