A platform for research: civil engineering, architecture and urbanism
Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures
Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures
Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures
Chen, Yu-Hai (author) / Liu, Hong-Xia (author) / Xu, Han-Chen-Xi (author) / Wang, Shu-Long (author) / Fan, Xiao-Jiao (author) / Zhao, Lu (author) / Feng, Xing-yao (author)
Materials science in semiconductor processing ; 48 ; 9-13
2016-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
British Library Online Contents | 2008
|Nanostructured W–La2O3 electrode materials with high content La2O3 doping
British Library Online Contents | 2005
|British Library Online Contents | 2010
|Structural properties of Al2O3-La2O3 binary oxides prepared by sol-gel
British Library Online Contents | 2007
|Sm3+-doped La2O3–Al2O3–SiO2-glasses: structure, fluorescence and thermal expansion
British Library Online Contents | 2013
|