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III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
Wutzler, Rene (author) / Rebohle, Lars (author) / Prucnal, Slawomir (author) / Hübner, René (author) / Facsko, Stefan (author) / Böttger, Roman (author) / Helm, Manfred (author) / Skorupa, Wolfgang (author)
Materials science in semiconductor processing ; 42 ; 166-169
2016-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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