Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Güçlü, Ç.Ş. / Özdemir, A.F. / Karabulut, A. et al. | British Library Online Contents | 2019

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Korucu, D. / Turut, A. / Turan, R. et al. | British Library Online Contents | 2013

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Ota, C. / Nishio, J. / Hatakeyama, T. et al. | British Library Online Contents | 2007

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

Ota, C. / Nishio, J. / Hatakeyama, T. et al. | British Library Online Contents | 2006

On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)

Tecimer, H. / Uslu, H. / Alahmed, Z.A. et al. | British Library Online Contents | 2014