Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

    New search for: Korucu, D.
    New search for: Turut, A.
    New search for: Turan, R.
    New search for: Altindal, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

    New search for: Korucu, D.
    New search for: Turut, A.
    New search for: Turan, R.
    New search for: Altindal, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

    New search for: Korucu, D.
    New search for: Turut, A.
    New search for: Turan, R.
    New search for: Altindal, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

    Contributors:

    Korucu, D. (author) / Turut, A. (author) / Turan, R. (author) / Altindal, S. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 344-351

    Publication date:

    2013-01-01

    Size:

    8 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs)

    Bilkan, Çiğdem / Gümüş, Ahmet / Altındal, Şemsettin | British Library Online Contents | 2015

    Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

    Güçlü, Ç.Ş. / Özdemir, A.F. / Karabulut, A. et al. | British Library Online Contents | 2019

    Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

    Morrison, D.J. / Hilton, K.P. / Uren, M.J. et al. | British Library Online Contents | 1999

    Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

    Saitoh, H. / Kimoto, T. / Matsunami, H. | British Library Online Contents | 2004

    The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation

    Felsl, H. P. / Wachutka, G. / Rupp, R. | British Library Online Contents | 2003

    Back to top