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    Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20cm2V−1s−1

    New search for: Wubet, Walelign
    New search for: Kuo, Dong-Hau

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    Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20cm2V−1s−1

    New search for: Wubet, Walelign
    New search for: Kuo, Dong-Hau

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20cm2V−1s−1

    New search for: Wubet, Walelign
    New search for: Kuo, Dong-Hau

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20cm2V−1s−1

    Contributors:

    Wubet, Walelign (author) / Kuo, Dong-Hau (author)

    Published in:

    Materials research bulletin ; 53 ; 290-294

    Publication date:

    2014-01-01

    Size:

    5 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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