Strain distribution in MgxZn1-xO layers with various content of Mg grown on a-plane sapphire by plasma-assisted molecular beam epitaxy

Wierzbicka, A. / Pietrzyk, M.A. / Reszka, A. et al. | British Library Online Contents | 2017

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Ruterana, P. / Vermaut, P. / Potin, V. et al. | British Library Online Contents | 1997

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

Heinke, H. / Fischer, F. / Waag, A. et al. | British Library Online Contents | 1995

Radio frequency plasma nitridation of c-plane sapphire; influence on properties of GaN grown by molecular beam epitaxy

Heinlein, C. / Grepstad, J. K. / Riechert, H. et al. | British Library Online Contents | 1999

Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Ding, P. / Pan, X. / Huang, J. et al. | British Library Online Contents | 2012