Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Zhou, H. / Ruhm, A. / Jin-Phillipp, N. Y. et al. | British Library Online Contents | 2001

Strain distribution in MgxZn1-xO layers with various content of Mg grown on a-plane sapphire by plasma-assisted molecular beam epitaxy

Wierzbicka, A. / Pietrzyk, M.A. / Reszka, A. et al. | British Library Online Contents | 2017

Strain distribution in MgxZn1-xO layers with various content of Mg grown on a-plane sapphire by plasma-assisted molecular beam epitaxy

Wierzbicka, A. / Pietrzyk, M.A. / Reszka, A. et al. | British Library Online Contents | 2017

Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Ding, P. / Pan, X. / Huang, J. et al. | British Library Online Contents | 2012

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Ruterana, P. / Vermaut, P. / Potin, V. et al. | British Library Online Contents | 1997