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Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
Zhang, Letao (author) / Zhou, Xiaoliang (author) / Chang, Baozhu (author) / Wang, Longyan (author) / Xiao, Yuxiang (author) / He, Hongyu (author) / Zhang, Shengdong (author)
Materials science in semiconductor processing ; 68 ; 147-151
2017-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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