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Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
Zhang, Letao (Autor:in) / Zhou, Xiaoliang (Autor:in) / Chang, Baozhu (Autor:in) / Wang, Longyan (Autor:in) / Xiao, Yuxiang (Autor:in) / He, Hongyu (Autor:in) / Zhang, Shengdong (Autor:in)
Materials science in semiconductor processing ; 68 ; 147-151
01.01.2017
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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