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    Al passivation effect at the HfO2/GaAs interface: A first-principles study

    New search for: Cai, Genwang
    New search for: Sun, Qiang
    New search for: Jia, Yu
    New search for: Liang, Erjun

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    Al passivation effect at the HfO2/GaAs interface: A first-principles study

    New search for: Cai, Genwang
    New search for: Sun, Qiang
    New search for: Jia, Yu
    New search for: Liang, Erjun

    Access

    Access via TIB
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    Al passivation effect at the HfO2/GaAs interface: A first-principles study

    New search for: Cai, Genwang
    New search for: Sun, Qiang
    New search for: Jia, Yu
    New search for: Liang, Erjun

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Al passivation effect at the HfO2/GaAs interface: A first-principles study

    Contributors:

    Cai, Genwang (author) / Sun, Qiang (author) / Jia, Yu (author) / Liang, Erjun (author)

    Published in:

    Materials science in semiconductor processing ; 41 ; 1-5

    Publication date:

    2016-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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