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    Origin of HfO2/GaAs interface states and interface passivation: A first principles study

    New search for: Wang, W.
    New search for: Xiong, K.
    New search for: Lee, G.
    New search for: Huang, M.
    New search for: Wallace, R. M.
    New search for: Cho, K.

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    Origin of HfO2/GaAs interface states and interface passivation: A first principles study

    New search for: Wang, W.
    New search for: Xiong, K.
    New search for: Lee, G.
    New search for: Huang, M.
    New search for: Wallace, R. M.
    New search for: Cho, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Origin of HfO2/GaAs interface states and interface passivation: A first principles study

    New search for: Wang, W.
    New search for: Xiong, K.
    New search for: Lee, G.
    New search for: Huang, M.
    New search for: Wallace, R. M.
    New search for: Cho, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Origin of HfO2/GaAs interface states and interface passivation: A first principles study

    Contributors:

    Wang, W. (author) / Xiong, K. (author) / Lee, G. (author) / Huang, M. (author) / Wallace, R. M. (author) / Cho, K. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 256 ; 6569-6573

    Publication date:

    2010-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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