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    Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers

    New search for: Nishinaka, Hiroyuki
    New search for: Tahara, Daisuke
    New search for: Morimoto, Shota
    New search for: Yoshimoto, Masahiro

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    Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers

    New search for: Nishinaka, Hiroyuki
    New search for: Tahara, Daisuke
    New search for: Morimoto, Shota
    New search for: Yoshimoto, Masahiro

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers

    New search for: Nishinaka, Hiroyuki
    New search for: Tahara, Daisuke
    New search for: Morimoto, Shota
    New search for: Yoshimoto, Masahiro

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers

    Contributors:

    Nishinaka, Hiroyuki (author) / Tahara, Daisuke (author) / Morimoto, Shota (author) / Yoshimoto, Masahiro (author)

    Published in:

    MATERIALS LETTERS ; 205 ; 28-31

    Publication date:

    2017-01-01

    Size:

    4 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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