Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition: Fid-Bau Portal

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Stoklas, R. / Gregušová, D. / Hasenöhrl, S. / Brytavskyi, E. / Ťapajna, M. / Fröhlich, K. / Haščík, Š. / Gregor, M. / Kuzmík, J.

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Stoklas, R. / Gregušová, D. / Hasenöhrl, S. / Brytavskyi, E. / Ťapajna, M. / Fröhlich, K. / Haščík, Š. / Gregor, M. / Kuzmík, J.

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Stoklas, R. / Gregušová, D. / Hasenöhrl, S. / Brytavskyi, E. / Ťapajna, M. / Fröhlich, K. / Haščík, Š. / Gregor, M. / Kuzmík, J.

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Document information

Title:

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Contributors:

Stoklas, R. (author) / Gregušová, D. (author) / Hasenöhrl, S. (author) / Brytavskyi, E. (author) / Ťapajna, M. (author) / Fröhlich, K. (author) / Haščík, Š. (author) / Gregor, M. (author) / Kuzmík, J. (author)

Published in:

Applied surface science ; 461 ; 255-259

Publication date:

2018-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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