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Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
Kanashima, T. (author) / Yamashiro, R. (author) / Zenitaka, M. (author) / Yamamoto, K. (author) / Wang, D. (author) / Tadano, J. (author) / Yamada, S. (author) / Nohira, H. (author) / Nakashima, H. (author) / Hamaya, K. (author)
Materials science in semiconductor processing ; 70 ; 260-264
2017-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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