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    Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

    New search for: Shi, L.
    New search for: Yuan, Y.
    New search for: Liang, X. F.
    New search for: Xia, Y. D.
    New search for: Yin, J.
    New search for: Liu, Z. G.

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    Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

    New search for: Shi, L.
    New search for: Yuan, Y.
    New search for: Liang, X. F.
    New search for: Xia, Y. D.
    New search for: Yin, J.
    New search for: Liu, Z. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

    New search for: Shi, L.
    New search for: Yuan, Y.
    New search for: Liang, X. F.
    New search for: Xia, Y. D.
    New search for: Yin, J.
    New search for: Liu, Z. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

    Contributors:

    Shi, L. (author) / Yuan, Y. (author) / Liang, X. F. (author) / Xia, Y. D. (author) / Yin, J. (author) / Liu, Z. G. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 253 ; 3731-3735

    Publication date:

    2007-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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