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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
Yurasov, D.V. (author) / Novikov, A.V. (author) / Shaleev, M.V. (author) / Baidakova, N.A. (author) / Morozova, E.E. (author) / Skorokhodov, E.V. (author) / Ota, Y. (author) / Hombe, A. (author) / Kurokawa, Y. (author) / Usami, N. (author)
Materials science in semiconductor processing ; 75 ; 143-148
2018-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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