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Crystal perfection in GaP films heteroepitaxially grown on GaAs by low - pressure metalorganic chemical vapor deposition

Zhaochun, Z. / Jiaoqing, P. / Deliang, C. / Xianggui, K. / Xiaoyan, Q. / Baibiao, H. / Minhua, J.

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Crystal perfection in GaP films heteroepitaxially grown on GaAs by low - pressure metalorganic chemical vapor deposition

Zhaochun, Z. / Jiaoqing, P. / Deliang, C. / Xianggui, K. / Xiaoyan, Q. / Baibiao, H. / Minhua, J.

Crystal perfection in GaP films heteroepitaxially grown on GaAs by low - pressure metalorganic chemical vapor deposition

Zhaochun, Z. / Jiaoqing, P. / Deliang, C. / Xianggui, K. / Xiaoyan, Q. / Baibiao, H. / Minhua, J.

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Document information

Title:

Crystal perfection in GaP films heteroepitaxially grown on GaAs by low - pressure metalorganic chemical vapor deposition

Contributors:

Zhaochun, Z. (author) / Jiaoqing, P. (author) / Deliang, C. (author) / Xianggui, K. (author) / Xiaoyan, Q. (author) / Baibiao, H. (author) / Minhua, J. (author)

Published in:

RARE METALS -BEIJING- ENGLISH EDITION ; 19 ; 87-90

Publication date:

2000-01-01

Size:

4 pages

ISSN:

1001-0521

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 669

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