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Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Zhang, Tong (author) / Wang, Lei (author) / Li, Xiaobo (author) / Bu, Yuyu (author) / Pu, Taofei (author) / Wang, Ruiling (author) / Li, Liuan (author) / Ao, Jin-Ping (author)
Applied surface science ; 462 ; 799-803
2018-01-01
5 pages
Article (Journal)
English
DDC:
620.44
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